Current Saturation and Voltage Gain in Bilayer Graphene Field Effect Transistors
نویسندگان
چکیده
منابع مشابه
Current saturation and voltage gain in bilayer graphene field effect transistors.
The emergence of graphene with its unique electrical properties has triggered hopes in the electronic devices community regarding its exploitation as a channel material in field effect transistors. Graphene is especially promising for devices working at frequencies in the 100 GHz range. So far, graphene field effect transistors (GFETs) have shown cutoff frequencies up to 300 GHz, while exhibiti...
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ژورنال
عنوان ژورنال: Nano Letters
سال: 2012
ISSN: 1530-6984,1530-6992
DOI: 10.1021/nl2038634